bpw96b, bpw96c www.vishay.com vishay semiconductors rev. 1.8, 23-aug-11 1 document number: 81532 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 silicon npn phototransistor description bpw96 is a silicon npn phototransistor with high radiant sensitivity in clear, t-1? plastic package. it is sensitive to visible and near infrared radiation. features ? package type: leaded ? package form: t-1? ? dimensions (in mm): ? 5 ? leads with stand-off ? high photo sensitivity ? high radiant sensitivity ? suitable for visible and near infrared radiation ? fast response times ? angle of half sensitivity: ? = 20 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec note ** please see document vishay material category policy: www.vishay.com/doc?99902 applications ? detector in electronic control and drive circuits note ? test condition see table basic characteristics note ? moq: minimum order quantity 94 8391 product summary component i ca (ma) ? (deg) 0.1 (nm) bpw96b 2.5 to 7.5 20 450 to 1080 bpw96c 4.5 to 15 20 450 to 1080 ordering information ordering code packaging remarks package form bpw96b bulk moq: 4000 pcs, 4000 pcs/bulk t-1? bpw96c bulk moq: 4000 pcs, 4000 pcs/bulk t-1? absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit collector emitter voltage v ceo 70 v emitter collector voltage v eco 5v collector current i c 50 ma collector peak current t p /t 0.5, t p 10 ms i cm 100 ma power dissipation t amb 47 c p v 150 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 3 s t sd 260 c thermal resistance junction/ambient connected with cu wire, 0.14 mm 2 r thja 350 k/w
bpw96b, bpw96c www.vishay.com vishay semiconductors rev. 1.8, 23-aug-11 2 document number: 81532 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipation limit vs. ambient temperature 0 40 80 120 160 200 p v - po w er dissipation (mw) t am b - am b ient temperat u re (c) 100 80 60 40 20 0 94 8300 r thja basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit collector emitter breakdown voltage i c = 1 ma v (br)ceo 70 v collector emitter dark current v ce = 20 v, e = 0 i ceo 1 200 na collector emitter capacitance v ce = 5 v, f = 1 mhz, e = 0 c ceo 3pf angle of half sensitivity ? 20 deg w avelength of peak sensitivity p 850 nm range of spectral bandwidth 0.1 450 to 1080 nm collector emitter saturation voltage e e = 1 mw/cm 2 , = 950 nm, i c = 0.1 ma v cesat 0.3 v turn-on time v s = 5 v, i c = 5 ma, r l = 100 t on 2.0 s turn-off time v s = 5 v, i c = 5 ma, r l = 100 t off 2.3 s cut-off frequency v s = 5 v, i c = 5 ma, r l = 100 f c 180 khz type dedicated characteristics parameter test condition part symbol min. typ. max. unit collector light current e e = 1 mw/cm 2 , = 950 nm, v ce = 5 v bpw96b i ca 2.5 4.5 7.5 ma bpw96c i ca 4.5 8 15 ma
bpw96b, bpw96c www.vishay.com vishay semiconductors rev. 1.8, 23-aug-11 3 document number: 81532 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - collector dark current vs. ambient temperature fig. 2 - relative collector current vs. ambient temperature fig. 3 - collector ligh t current vs. irradiance fig. 4 - collector light curren t vs. collector emitter voltage fig. 5 - collector emitter capaci tance vs. collecto r emitter voltage fig. 6 - turn-on/turn-off time vs. collector current 20 100 40 60 80 10 10 1 10 2 10 3 10 4 v ce = 20 v t am b - am b ient temperat u re (c) i ceo - collector dark c u rrent (na) 94 8304 0 0.6 0.8 1.0 1.2 1.4 2.0 20 40 60 80 100 1.6 1.8 94 8239 t am b - am b ient temperat u re (c) i ca rel - relati v e collector c u rrent v ce = 5 v e e = 1 mw/cm 2 = 950 nm 0.01 0.1 1 0.01 0.1 1 10 10 94 8296 v ce =5v = 950 nm bpw96b bpw96c e e - irradiance (mw/cm 2 ) i - collector light c u rrent (ma) ca 0.1 1 10 0.1 1 10 i - collector light c u rrent (ma) ca v ce - collector emitter voltage (v) 100 94 8297 bpw96b e e = 1 mw/cm2 0.5 mw/cm2 0.1 mw/cm2 0.2 mw/cm2 0.05 mw/cm2 =950nm 0.1 1 10 0 2 4 6 8 10 v ce - collector emitter voltage (v) 100 94 8301 c - collector emitter capacitance (pf) ceo f = 1 mhz 0 0 2 4 6 8 10 12 14 2 8 6 4 v ce = 5 v r l = 100 = 950 nm t off t on i c - collector c u rrent (ma) t on /t off - t u rn-on/t u rn-off time (s) 94 8293
bpw96b, bpw96c www.vishay.com vishay semiconductors rev. 1.8, 23-aug-11 4 document number: 81532 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - relative spectral sensitivity vs. wavelength fi g. 8 - relative radiant sensitivity vs. angular displacement package dimensions in millimeters 400 600 1000 0 0.2 0.4 0.6 0.8 1.0 s ( ) rel - relati v e spectral sensiti v ity - wa v elength (nm) 94 8348 800 0.4 0.2 0 94 8299 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 s rel - relati v e radiant sensiti v ity ? - ang u lar displacement iss u e:1; 01.07.96 0.15 dra w ing-no.: 6.544-5086.01-4 specifications according to din technical dra w ings 0.5 area not plane 0.15 0.3 8.6 0.5 5.75 0.15 < 0.7 e c 1.5 7.6 ? 5 1 0.8 - 0.1 + 0.2 - 0.1 + 0.2 0.3 + 0.15 - 0.1 + 0.2 0.25 0.63 chip position 2.54 nom. 12.3 (4.8) 35.3 r 2. 45 ( sphere) 96 12192
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